Partner 4. Warsaw University of Technology (Poland)

The research at the Laboratory of Ternary Compounds within the Division of Semiconductors, Faculty of Physics, WUT is focused on the fundamental studies of defect physics of photovoltaic materials and structures based on semiconducting compounds from the Cu(In,Ga)(Se,S)2 family. Optical and electrical properties of materials and structures are studied by use of capacitance techniques (DLTS, admittance spectroscopy, thermally stimulated capacitance TSCAP, capacitance-voltage and drive level profiling, photocapacitance), photo and electroluminescence, modulated photocurrents MPC, Raman spectroscopy. The group has many years of experience in capacitance defect spectroscopy of chalcopyrites and photovoltaic structures. Leader of the group is Prof. Malgorzata Igalson,  who has authored several refereed articles and given invited talks at major PV conferences. This group collaborates with the best photovoltaic laboratories in Europe, such as Angstrom Solar Center and Helmholz Center Berlin. It has been involved in several multinational projects and presently is a partner in a project hipoCIGS under FP7. The expertise available will be crucial to meet targets as in WP3, WP4 and WP9.

Laboratory of Ternary Compounds at Faculty of Physics, Warsaw University of Technology has been active in the field of photovoltaics since 1980s. Most of its research activity is focused on the fundamental studies of defect physics of photovoltaic materials and structures based on semiconducting compounds from the Cu(In,Ga)(Se,S)2 family. Optical and electrical properties of materials and structures are studied by use of capacitance techniques (DLTS, admittance spectroscopy, thermally stimulated capacitance TSCAP, capacitance-voltage and drive level profiling, photocapacitance), photo and electroluminescence, modulated photocurrents MPC, Raman spectroscopy. The group has many years of experience in capacitance defect spectroscopy of chalcopyrites and photovoltaic structures. Its contribution on specific DX-like properties of such native defects as VSe and InCu brought new understanding to defect-related phenomena having impact on photovoltaic performance of CIGS devices.

The experimental basis of Department of Semiconductors includes:

-       Electronic instrumentation for measurement of complex admittance, capacitance and low currents (HP 4284A LCR meter, Boonton 7200 capacitance bridge, Keithley 428 current amplifier, Keithley 615 electrometer)

-       SPI spectrometer (visible and infrared wavelength range)

-       Nitrogen cryostats for optical and electrical measurements at 80-330 K

-       He closed cycle cryostats for optical and electrical measurements at 10-400 K

-       Photoluminescence set-up including Argon+ laser and double grating monochromator MDR3