The Grup d’Optoelectrònica i Semiconductors (GOPS) is a research group within the Institut de Disseny i Fabricació (IDF) in the UPV. GOPS specializes in the Research and Development of thin films and nanostructured semiconductors (CIS chalcopyrites, ZnO etc.) by cathodic electrochemical synthesis and spray pyrolysis of semiconductors for optoelectronic and photovoltaic applications. Several techniques for characterization like X-ray diffraction, micro-Raman and photoluminescence are available for a temperature range between 6 and 400 K as well as microscopies, SEM, TEM and AFM. These facilities and expertise available will be essential for the successful implementation of the project through staff exchange, specifically in WP1, WP2 and WP4 in meeting M1, 2 and M8.The group also has established successful ongoing collaboration between international partners in particular with groups of this consortium: UPM, UM and MDU. Prof. Dr. Bernabé Marí who has developed his research activity in the field of semiconductor physics publishing more than 80 research papers leads the group.
Expertise and human resources: UPV group comprises one professor (Dr. Bernabé Marí), three permanent lecturer-researchers, one technician and, at present, three research fellows. UPV group has expertise in the study of semiconductors ranging from bulk IV, III-V, II-VI, and I-VII semiconductors, to layered III-VI semiconductors, quantum dots and porous materials, both for optoelectronic and solar cell applications. In recent years, the group has acquired expertise in the use of techniques such as cathodic electrodeposition and spray pyrolisis for preparation of thin films and nanostructured semiconductors, CIS chalcopyrites, ZnO and other related ternary compounds like ZnMO (M=Cd, Co, Mn, Cu, Fe,…) with different compositions and morphologies are currently synthesized. The group members have expertise in physico-chemical characterization of semiconductor thin films. Both morphology and composition of nanostructured films are optimized to enhance luminescence or magnetic properties. Physico-chemical, structural and optical characterizations are the main strengths of the UPV group.
Infrastructure and facilities description: Electrodeposition of ZnO and ternary ZnO-related semiconductors has been established using both aqueous and organic solvents. Chalcopyrite materials like CuInSe2 and CuInS2 are prepared by cathodic electrodeposition and spray pyrolisis. Facilities related to deposition techniques include three potentiostat-galvanostats for electrodeposition, electrochemical impedance and photoelectrochemical characterization, and a spray pyrolisis system. Different optical spectroscopies, including direct and diffuse reflectivity, transmittance, photoluminescence for a temperature range between 6 and 400 K are available. Available facilities also include several techniques for solid state characterization like X-ray diffraction (including glancing incidence) and micro-Raman and microscopies like SEM, TEM and AFM.